A Fokker-Planck reaction model for the epitaxial growth and shape transition of quantum dots.

نویسندگان

  • Chaozhen Wei
  • Brian J Spencer
چکیده

We construct a Fokker-Planck reaction (FPR) model to investigate the dynamics of the coupled epitaxial growth and shape transition process of an array of quantum dots (QDs). The FPR model is based on a coupled system of Fokker-Planck equations wherein the distribution of each island type is governed by its own Fokker-Planck equation for growth, with reaction terms describing the shape transitions between islands of different types including asymmetric shapes. The reaction terms for the shape transitions depend on the island size and are determined from explicit calculations of the lowest barrier pathway for each shape transition. This mean-field model enables us to consider the kinetics of asymmetric shape transitions and study the evolution of island shape distributions during the coupled growth and transition process. Asymmetric metastable shapes play a crucial role in the dynamics, with asymmetric QDs comprising up to 10% of the population, and with up to 100% of the shape transitions passing through asymmetric shapes. Moreover, we find that the characteristic multimodal distribution of pyramid/dome QD coarsening can be eliminated at sufficiently high temperature and deposition rate.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Wavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy

In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...

متن کامل

Wavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy

In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...

متن کامل

Synthesis and Optical Study of CdZnTe Quantum Dots

The comparison of growth processes and fluorescent properties of CdZnTe semiconductor quantum dots that are synthesized in different concentrations of Zn2+ in water are discussed in this paper. The samples are characterized through absorbtion (UV) and photoluminescence spectra (PL). The results show that when the reaction time is prolonged, the absorption peak and fluorescent emission peak pres...

متن کامل

Size selected growth of nanodots: effects of growth kinetics and energetics on the formation of stationary size distributions

The size selection of nanodots during the growth is studied by using a reaction kinetic model, where reaction rates depend on the dot size. The characteristic feature of the reaction rates is the energetics, where the free energy of dots has a minimum at the certain dot size. The model equations are solved by using a particle coalescence simulation method. We find phenomenologically three disti...

متن کامل

Synthesis and Optical Study of CdZnTe Quantum Dots

The comparison of growth processes and fluorescent properties of CdZnTe semiconductor quantum dots that are synthesized in different concentrations of Zn2+ in water are discussed in this paper. The samples are characterized through absorbtion (UV) and photoluminescence spectra (PL). The results show that when the reaction time is prolonged, the absorption peak and fluorescent emission peak pres...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Proceedings. Mathematical, physical, and engineering sciences

دوره 473 2206  شماره 

صفحات  -

تاریخ انتشار 2017